Semiconductor memory device which applies multiple voltages to the word line

A semiconductor memory device comprising:

• a first word line coupled to a first memory cell;
• and
• a driver configured to apply a voltage to the first word line to read data in page units,
• wherein a first page data associated with the first word line is read by a first reading using a first voltage and by a second reading using a second voltage,
• wherein the driver is further configured to:
• apply a third voltage to the first word line during a first phase of the first reading, wherein a potential of the first word line is a fourth voltage before applying the third voltage, and the third voltage is higher than the first voltage by an amount which is based on a first difference, the first difference being a difference between the fourth voltage and the first voltage,
• apply the first voltage to the first word line during a second phase of the first reading after the first phase of the first reading,
• apply a fifth voltage to the first word line during a first phase of the second reading, wherein the fifth voltage is higher than the second voltage by an amount which is based on a second difference, the second difference being a difference between the first voltage and the second voltage, and
• apply the second voltage to the first word line during a second phase of the second reading after the first phase of the second reading,
• wherein the second difference is greater than the first difference, and a difference between the fifth voltage and the second voltage is greater than a difference between the third voltage and the first voltage, and
• wherein the first page data is sensed in the second phases of the first and second readings, respectively.