Resistive volatile/non-volatile floating electrode logic/memory cell

A logic device comprising

• three or more serially connected atomic switches wherein said serially connected atomic switches are stacked with an inert electrode of one atomic switch being directly adjacent to an active metal electrode of another atomic switch, said three or more atomic switches exhibiting OFF state resistances that differ from each other, ON state resistances that differ from each other and reset currents that differ from each other, and
• an additional atomic switch connected to a node between two of said three or more serially connected atomic switches.

A method of operating an anti-serial connection of two atomic switches, said method comprising steps of

• applying a threshold voltages across said atomic switches to render said atomic switches conductive,
• limiting current through said atomic switches to a level less than a current required to render either of said atomic switches non-conductive regardless, within limits, of voltage applied across said anti-serial connection of said two atomic switches, and
• terminating said step of limiting current while an applied voltage applied to either of said atomic switches is of a magnitude greater than a threshold voltage required to render a respective one of said two atomic switches non-conductive.