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US 9,792,984 B1Granted
Method, system and device for non-volatile memory device operation
AssigneeArm Limited
InventorsAzeez Jennudin Bhavnagarwala, Piyush Agarwal, Akshay Kumar
Life of this patent
Estimating the term…
Abstract
Disclosed are methods, systems and devices for operation of non-volatile memory devices. In one aspect, a correlated electron switch (CES) device may be placed in any one of multiple memory states in a write operation. Limiting current between terminals of the non-volatile memory device during read operations may enable use of higher voltages for higher realized gain.
Claims19
A device comprising:
- a circuit to generate a reference current;
- and
- a circuit to compare a signal current from a bitline coupled to a non-volatile memory element to the reference current to detect an impedance state of the non-volatile memory element, wherein the circuit to compare the signal current from the bitline to the reference current further comprises one or more conducting elements to selectively couple the bitline to a source voltage in response to the signal current exceeding the reference current and selectively disconnect the bitline from the source voltage in response to the signal current not exceeding the reference current.
A device comprising:
- a circuit to generate a reference current;
- and
- a circuit to compare a signal current from a bitline coupled to a non-volatile memory element to the reference current to detect an impedance state of the non-volatile memory element, wherein the circuit to compare the signal current from the bitline to the reference current further comprises one or more conducting elements to selectively couple the bitline to a voltage supply in response to the signal current not exceeding the reference current and selectively disconnect the bitline from the voltage supply in response to the signal current exceeding the reference current.
A method comprising:
- generating a reference current;
- and
- comparing a signal current from a bitline coupled to a non-volatile memory element to the reference current to detect an impedance state of the non-volatile memory element comprising:
- selectively coupling the bitline to a voltage supply if the signal current does not exceed the reference current;
- and
- selectively disconnecting the bitline from the voltage supply if the signal current exceeds the reference current.
3 more elements
A method comprising
- generating a reference current;
- and
- comparing a signal current from a bitline coupled to a non-volatile memory element to the reference current to detect an impedance state of the non-volatile memory element comprising:
- selectively coupling the bitline to a source voltage if the signal current exceeds the reference current;
- and
- selectively disconnecting the bitline from the source voltage if the signal current does not exceed the reference current.
3 more elements
Dependencies are inferred from the claim text.