US 9,792,976 B2 · Memory device including delay circuit having gate insulation films with thicknesses different from each other

Abstract

Provided is a memory device including a delay circuit having gate insulation films with thicknesses different from each other. The memory device includes a delay circuit configured to input an input signal and output an output signal, and circuit blocks configured to control an operation of reading or writing memory cell data in response to the input signal or the output signal. One of transistors constituting a circuit block has a gate insulation film having such a thickness that an effect of negative biased temperature instability (NBTI) or positive biased temperature instability (PBTI) on the transistors is minimized. The delay circuit may be affected little by a shift in a threshold voltage that may be caused by NTBI or PBTI, and thus, achieve target delay time.

Claims19

Dependent claims

A delay circuit comprising:

a first resistor comprising a first set of one or more transistors connected between a source of a power voltage and a first node;
a second resistor comprising a second set of one or more transistors connected between a second node and a ground voltage;
and
an inverter comprising a third set of one or more transistors connected between the first node and the second node, the inverter configured to receive an input signal, invert the input signal, and output the inverted input signal as an output signal,
wherein at least one transistor of the first set of one or more transistors has a gate insulation film having a thickness different from that of at least one transistor of the second set of one or more transistors.

2 more elements

Dependencies are inferred from the claim text.

Memory device including delay circuit having gate insulation films with thicknesses different from each other

Life of this patent

Memory device including delay circuit having gate insulation films with thicknesses different from each other

Life of this patent

Abstract

Claims19