Ferroelectric memory cell sensing

A method, comprising:

• virtually grounding a digit line that is in electronic communication with a ferroelectric capacitor of a ferroelectric memory cell and a virtual ground, wherein virtually grounding the digit line comprises activating a switching component that is in electronic communication with the digit line and the virtual ground;
• applying a voltage to a plate of the ferroelectric capacitor while the digit line is virtually grounded;
• isolating the digit line from the virtual ground after applying the voltage to the plate of the ferroelectric capacitor and after a threshold associated with applying the voltage is reached, wherein isolating the digit line from the virtual ground comprises deactivating the switching component, wherein deactivating the switching component comprises reducing a linear equalization voltage applied to the switching component that is in electronic communication with the digit line and the virtual ground;
• and
• activating a selection component that is in electronic communication with the ferroelectric capacitor for a sense operation of the ferroelectric memory cell after the linear equalization voltage is reduced, wherein activating the selection component comprises applying a voltage to a word line in electronic communication with the ferroelectric memory cell, wherein the voltage applied to the word line is increased while the linear equalization voltage is reduced.

A method, comprising:

• virtually grounding a digit line that is in electronic communication with a ferroelectric capacitor of a ferroelectric memory cell and a virtual ground, wherein virtually grounding the digit line comprises activating a switching component that is in electronic communication with the digit line and the virtual ground;
• applying a voltage to a plate of the ferroelectric capacitor while the digit line is virtually grounded;
• and
• isolating the digit line from the virtual ground after applying the voltage to the plate of the ferroelectric capacitor and after a threshold associated with applying the voltage is reached, wherein isolating the digit line from the virtual ground comprises deactivating the switching component, wherein deactivating the switching component comprises reducing a linear equalization voltage applied to the switching component that is in electronic communication with the digit line and the virtual ground, wherein the voltage applied to the plate is increased while the linear equalization voltage is reduced.

A method of operating a ferroelectric memory cell, comprising:

• activating a switching component that is in electronic communication with a digit line and a virtual ground;
• applying a voltage to a ferroelectric capacitor of the ferroelectric memory cell before sensing a logic state of the ferroelectric memory cell as part of a read operation, the ferroelectric memory cell in electronic communication with the digit line;
• determining that a rate of change of a voltage of a plate satisfies a threshold;
• deactivating the switching component after applying the voltage to the ferroelectric capacitor based at least in part on determining that the threshold is satisfied;
• and
• selecting the ferroelectric memory cell after deactivating the switching component.

An electronic memory apparatus, comprising:

• a ferroelectric memory cell that comprises a ferroelectric capacitor in electronic communication with a digit line;
• and
• a controller in electronic communication with the ferroelectric memory cell and operable to:
• virtually ground the digit line that is in electronic communication with the ferroelectric capacitor of the ferroelectric memory cell and a virtual ground;
• apply a voltage to a plate of the ferroelectric capacitor while the digit line is virtually grounded and before sensing a logic state of the ferroelectric memory cell as part of a read operation;
• determine that a threshold associated with a rate of change of the voltage of the plate has been reached;
• and
• isolate the digit line from the virtual ground after applying the voltage to the plate of the ferroelectric capacitor and after the threshold associated with applying the voltage is reached.