Display device
AssigneeJapan Display Inc.
InventorsGen Koide, Toshiaki Fukushima
Life of this patent
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Abstract
To reduce the area of a portion where a plurality of transistors are provided in a region around a display region and to reduce the area of the region around the display region, a display device includes a first transistor and a second transistor each as a transistor, and the transistor includes a connection wiring that electrically connects a semiconductor film and a source-drain electrode to each other via an opening portion provided in an insulating film. The first transistor and the second transistor are adjacent to each other, and there is a clearance between an end portion, on the side of the second transistor, of the connection wiring in the first transistor and an end portion, on the side of the second transistor, of the opening portion in the first transistor.
Claims18
A display device comprising:
- a substrate;
- a pixel circuit having pixels formed therein;
- a plurality of control circuits that respectively feed signals relating to an image to the pixel circuit;
- and
- a plurality of transistors in a control circuit;
- wherein the plurality of transistors includes:
- a gate line;
- an insulating film with an opening portion;
- a drain electrode and a source electrode arranged in a second direction;
- a semiconductor film overlapped with the drain electrode and the source electrode with the insulating film interposed therebetween;
- and
- a conductive wiring that electrically connects the semiconductor film and the source electrode or the drain electrode via the opening portion,
- an end of the semiconductor film is located in the opening portion in a plan view,
- the plurality of transistors includes a first transistor and a second transistor,
- the first transistor and the second transistor are adjacent to each other in the second direction, and
- there is a clearance between the end of the semiconductor film in the first transistor on a side of the second transistor and an end of the opening portion in the first transistor on the side of the second transistor.
Dependencies are inferred from the claim text.