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AssigneeLam Research Corporation
InventorsMehmet Derya Tetiker, Saravanapriyan Sriraman, Andrew D. Bailey, III, Alex Paterson, Richard A. Gottscho
Estimating the term…
Disclosed are methods of optimizing a computer model which relates the etch profile of a feature on a semiconductor substrate to a set of independent input parameters (A), via the use of a plurality of model parameters (B). In some embodiments, the methods may include modifying one or more values of B so as to reduce a metric indicative of the differences between computed reflectance spectra generated from the model and corresponding experimental reflectance spectra with respect to one or more sets of values of A. In some embodiments, calculating the metric may include an operation of projecting the computed and corresponding experimental reflectance spectra onto a reduced-dimensional subspace and calculating the difference between the reflectance spectra as projected onto the subspace. Also disclosed are etch systems implementing such optimized computer models.
A method of generating a lithography mask by optimizing a computer model which relates an etch profile of a feature on a semiconductor substrate to a set of independent input parameters, via the use of a plurality of model parameters, the method comprising:
A method of etching a semiconductor substrate by optimizing a computer model which relates the etch profile of a feature on a semiconductor substrate to a set of independent input parameters, via the use of a plurality of model parameters, the method comprising:
Dependencies are inferred from the claim text.