End of life prediction to reduce retention triggered operations
AssigneeSanDisk Technologies LLC
InventorsSergey Anatolievich Gorobets, Neil Richard Darragh, Liam Michael Parker
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AssigneeSanDisk Technologies LLC
InventorsSergey Anatolievich Gorobets, Neil Richard Darragh, Liam Michael Parker
Estimating the term…
A memory system or flash card includes a mechanism for memory cell measurement and analysis that independently measures/predicts memory wear/endurance, data retention (DR), read disturb, and/or remaining margin. These effects can be independently quantified by analyzing the state distributions of the individual voltage levels of the cells. In particular, a histogram of cell voltage distributions of the memory cells can be analyzed to identify signatures for certain effects (e.g. wear, DR, read disturb, margin, etc.). Those measurements are used for block cycling, data loss prediction, or adjustments to memory parameters. Pre-emptive action at the appropriate time based on the measurements leads to improved memory management and data management. That action includes calculating the remaining useful life of data stored in memory, cycling blocks, predicting data loss, trade-off or dynamic adjustments of memory parameters.
A method for predicting an end of life value of a memory comprising memory blocks, the method comprising:
A method for measuring wear comprising:
A storage device comprising a controller and memory blocks, wherein the processor is configured for:
Dependencies are inferred from the claim text.