MOS-based voltage reference circuit
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJaw-Juinn Horng, Amit Kundu, Chung-Hui Chen, Yung-Chow Peng
Life of this patent
Estimating the term…
Loading patent…
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsJaw-Juinn Horng, Amit Kundu, Chung-Hui Chen, Yung-Chow Peng
Estimating the term…
A voltage reference circuit is provided that includes a first circuit, a second circuit and a third circuit. The first circuit has a first MOS transistor pair and the second circuit has a second MOS transistor pair. The first circuit is configured to provide a first voltage component that changes at a first rate having a first slope as a temperature to which the voltage reference circuit is subjected changes. The second circuit is configured to provide a second voltage component that changes at a second rate having a second slope as the temperature changes. The third circuit is configured to use the first voltage component and the second voltage component to generate the reference voltage component that changes at a fifth rate having a fifth slope as the temperature changes. The fifth slope is substantially equal to zero to promote insensitivity of the reference voltage component to temperature changes.
A voltage reference circuit, comprising:
A voltage reference circuit, comprising:
A voltage reference circuit, comprising:
Dependencies are inferred from the claim text.