Method of manufacturing a semiconductor device
AssigneeSamsung Electronics Co., Ltd.
InventorsJin-seok Heo, In-sung Kim
Life of this patent
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Abstract
A method of manufacturing a semiconductor device includes irradiating a first photoresist layer via a light source, measuring a first exposure intensity of the first photoresist layer, irradiating a second photoresist layer via the light source, measuring a second exposure intensity of the second photoresist layer, subtracting the second exposure intensity from the first exposure intensity, and subsequent to the subtracting, exposing a third photoresist layer formed on a semiconductor substrate by using the light source, wherein an out-of-band (OoB) extreme ultraviolet (EUV) light eliminating layer is formed on the second photoresist layer.
Claims20
A method of manufacturing a semiconductor device, the method comprising:
- irradiating a first photoresist layer with light via an EUV scanner;
- developing the first photoresist layer to form a first photoresist pattern;
- measuring thicknesses of the first photoresist pattern;
- converting the thicknesses of the first photoresist pattern into a first exposure intensity distribution of the first photoresist layer;
- irradiating a second photoresist layer, on which an OoB EUV light eliminating layer is formed, with light via the EUV scanner;
- developing the second photoresist layer to from a second photoresist pattern;
- measuring thicknesses of the second photoresist pattern;
- converting the thicknesses of the second photoresist pattern into a second exposure intensity distribution of the second photoresist layer;
- subtracting the second exposure intensity distribution from the first exposure intensity distribution;
- based on a result of the subtraction, determining an exposure distribution of an OoB EUV radiation that is generated by the EUV scanner;
- based on the determining, adjusting or determining passing of the EUV scanner or a part of the EUV scanner;
- after the adjusting or determining passing, exposing a photoresist layer formed on a substrate using the EUV scanner;
- and
- patterning the photoresist layer.
A method of manufacturing a semiconductor device, the method comprising:
- irradiating a first photoresist layer via a light source;
- measuring a first exposure intensity of the first photoresist layer;
- irradiating a second photoresist layer via the light source;
- measuring a second exposure intensity of the second photoresist layer;
- subtracting the second exposure intensity from the first exposure intensity;
- and
- subsequent to the subtracting, exposing a third photoresist layer formed on a semiconductor substrate by using the light source,
- wherein an OoB EUV light eliminating layer is formed on the second photoresist layer.
A method of manufacturing a semiconductor device, the method comprising:
- irradiating a first photoresist layer with light via an EUV scanner and measuring a first exposure intensity of the first photoresist layer;
- irradiating a second photoresist layer, on which an OoB EUV light eliminating layer is formed, with light via the EUV scanner and measuring a second exposure intensity of the second photoresist layer;
- subtracting the second exposure intensity from the first exposure intensity and determining, based on a result of the subtraction, an exposure distribution of an OoB EUV radiation that is generated by the EUV scanner;
- based on the determining, adjusting or determining passing of the EUV scanner;
- after the adjusting or determining passing, exposing a photoresist layer formed on a substrate using the EUV scanner;
- and
- patterning the photoresist layer.
Dependencies are inferred from the claim text.