US 9,791,497 B2 · Method of characterizing and modeling leakage statistics and threshold voltage for ensemble devices

Abstract

An approach for determining leakage current and threshold voltage for ensemble semiconductor devices, implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having program instructions, are operable to: receive a number m of individual devices within an ensemble device; identify a sub-threshold slope; determine an uplift factor; separate random variation in logarithm of a leakage current into a correlated random component and an uncorrelated random component; determine a first standard deviation of correlated random component for the ensemble device; determine a second standard deviation of the uncorrelated random component for the ensemble device; generate a statistical model for electrical features of the ensemble device, based on the number m of individual devices, the sub-threshold slope, the uplift factor, the first and second standard deviation, and statistical random variables; and determine the electrical features of the ensemble device based on the statistical model.

Claims20

Dependent claims

A method implemented in a computer infrastructure having computer executable code tangibly embodied on a computer readable storage medium having programming instructions operable to:

receive a number m of individual devices within an ensemble device;
identify a sub-threshold slope;
determine an uplift factor;
separate random variation in a logarithm of a leakage current into a correlated random component and an uncorrelated random component;
determine a first standard deviation of the correlated random component for the ensemble device;
determine a second standard deviation of the uncorrelated random component for the ensemble device;
generate a statistical model for electrical features of the ensemble device, based on the number m of individual devices, the sub-threshold slope, the uplift factor, the first standard deviation, the second standard deviation, and statistical random variables;
and
determine the electrical features of the ensemble device based on the statistical model for use in fabrication of integrated chips for semiconductor manufacturing.

6 more elements

A computer program product for determining leakage current, the computer program product comprising a computer readable hardware storage device and program instructions stored on the computer readable hardware storage device, the program instructions comprising:

program instructions to receive number m of individual devices within an ensemble device;
program instructions to identify a sub-threshold slope;
program instructions to determine an uplift factor, wherein the uplift factor varies with the number m of individual devices;
program instructions to determine a first standard deviation for the ensemble device, wherein the first standard deviation is associated with an uncorrelated component of random variations;
program instructions to determine a second standard deviation for the ensemble device, wherein the second standard deviation is associated with a correlated component of random variations;
program instructions to generate a statistical model for leakage current and threshold voltage of the ensemble device, based on the number m of individual devices, the sub-threshold slope, the uplift factor, the first standard deviation, the second standard deviation, and statistical random variables;
and
program instructions to determine the leakage current and the threshold voltage of the ensemble device based on the statistical model for use in fabrication of integrated chips for semiconductor manufacturing.

5 more elements

Dependencies are inferred from the claim text.

Method of characterizing and modeling leakage statistics and threshold voltage for ensemble devices

Life of this patent

Method of characterizing and modeling leakage statistics and threshold voltage for ensemble devices

Life of this patent

Abstract

Claims20