CMOS compatible BioFET
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsAlexander Kalnitsky, Yi-Shao Liu, Kai-Chih Liang, Chia-Hua Chu, Chun-Ren Cheng, Chun-Wen Cheng
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Abstract
The present disclosure provides a bio-field effect transistor (BioFET) and a method of fabricating a BioFET device. The method includes forming a BioFET using one or more process steps compatible with or typical to a complementary metal-oxide-semiconductor (CMOS) process. The BioFET device may include a substrate; a gate structure disposed on a first surface of the substrate and an interface layer formed on the second surface of the substrate. The interface layer may allow for a receptor to be placed on the interface layer to detect the presence of a biomolecule or bio-entity.
Claims20
A method of providing a BioFET device;
- comprising:
- providing a semiconductor substrate having a first surface and an opposing second surface;
- forming a FET device on the semiconductor substrate, wherein the forming the FET device includes:
- depositing a gate structure on the first surface of the semiconductor substrate and over a channel region of the FET device;
- etching an opening in an isolation layer disposed on the second surface of the semiconductor substrate, wherein the opening exposes the channel region, the channel region including a portion of the second surface of the semiconductor substrate;
- and
- forming an interface material on the exposed channel region in the opening.
A method of forming a BioFET device, comprising:
- providing a semiconductor substrate having a first surface and an opposing second surface;
- forming a transistor over the first surface of the semiconductor substrate, wherein the transistor is nearer to the first surface of the semiconductor substrate than the second surface of the semiconductor substrate;
- forming a multi-layer interconnect (MLI) coupled to the transistor and over the first surface of the semiconductor substrate, wherein the MLI is nearer to the first surface of the semiconductor substrate than the second surface of the semiconductor substrate;
- thinning the semiconductor substrate by removing the second surface of the semiconductor substrate and exposing a channel region of the transistor in the semiconductor substrate;
- etching an opening in the thinned semiconductor substrate extending to a conductive layer of the MLI;
- depositing a conductive material in the opening;
- and
- thereafter, forming an interface material on the exposed channel region of the transistor in the semiconductor substrate.
A method of fabricating a BioFET device, comprising:
- providing a semiconductor substrate having a first surface and an opposing second surface;
- forming a transistor device on the semiconductor substrate, wherein the forming the transistor device includes depositing a gate structure on the first surface of the semiconductor substrate and over a channel region of the transistor device;
- forming a multi-layer interconnect (MLI) structure over the transistor device;
- attaching a carrier substrate to a conductive layer of the MLI structure;
- removing portions of the semiconductor substrate to expose the channel region while the carrier substrate is attached;
- and
- forming an interface material on the exposed channel region.
Dependencies are inferred from the claim text.