340 GHz multipixel transceiver

A method of manufacturing a multi-pixel terahertz transceiver, comprising the steps of:

• providing a plurality of layers of a semiconductor, each of said plurality of layers of said semiconductor configured to perform less than all the functions of the transceiver, at least one of said layers of said semiconductor configured to be tested individually when not assembled in said stacked array;
• assembling said plurality of layers of a semiconductor in a stacked array, wherein each of said plurality of layers of a semiconductor in said stacked array is in electromagnetic communication with at least one other of said plurality of layers of a semiconductor in said stacked array;
• providing a local oscillator in electrical communication with said plurality of layers of said semiconductor in said stacked array, said local oscillator configured to provide an oscillation signal for each of a transmitted signal and a received signal;
• providing a biasing terminal for applying biasing signals in electrical communication with at least one of said plurality of layers of said semiconductor in said stacked array;
• providing an IF output terminal in electrical communication with at least one of said plurality of layers of said semiconductor in said stacked array;
• and
• providing an antenna array configured to transmit and to receive a plurality of terahertz signals.