Vacuum-processing apparatus, vacuum-processing method, and storage medium

A vacuum-processing method for forming a metal film on a substrate by sputtering a target disposed so as to face toward the substrate mounted on a mounting unit existing within a vacuum container, with ions of plasma obtained by converting a plasma-generating gas to plasma, and oxidizing the metal film, the method comprising:

• preparing a first target composed of a material having a property of adsorbing oxygen and a second target composed of a metal;
• covering the substrate on the mounting unit with a shielding member in order to prevent particles generated from the first target from adhering to the substrate, and disposing a shutter in a position facing the second target in order to prevent particles generated from the first target from adhering to the second target;
• sputtering the first target by supplying a plasma-generating voltage to the first target, and causing particles of the first target to adhere to an inside of the vacuum container;
• stopping the supply of the plasma-generating voltage to the first target, disposing the shutter in a position facing the first target in order to prevent particles generated from the second target from adhering to the first target, and retracting the shielding member from a position where the shielding member covers the substrate;
• sputtering the second target by supplying a plasma-generating voltage to the second target, and forming a metal film on the substrate;
• disposing the shutter in a position where the first target and the second target are shielded from the substrate when an oxygen-containing gas is supplied by gas injection holes;
• the oxygen-containing gas supplied from a support post attached to a bottom of the vacuum container to the shielding member attached to the support post, wherein the shielding member includes the gas injection holes;
• and
• horizontally moving the gas injection holes of the shielding member by rotation from a retracted position to above the substrate and supplying the oxygen-containing gas downward toward the substrate mounted on the mounting unit, thereby oxidizing the metal film on the substrate, wherein the rotation is about an axis that is parallel to a center axis of the mounting unit.