Micromechanical semiconductor sensing device
AssigneeInfineon Technologies AG
InventorsFranz-Peter Kalz, Horst Theuss, Bernhard Winkler, Khalil Hosseini, Joachim Mahler, Manfred Mengel
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Abstract
A micromechanical semiconductor sensing device is disclosed. In an embodiment the sensing device includes a micromechanical sensing structure being configured to yield an electrical sensing signal, and a piezoresistive sensing device provided in the micromechanical sensing structure, the piezoresistive sensing device being arranged to sense a mechanical stress disturbing the electrical sensing signal and being configured to yield an electrical disturbance signal based on the sensed mechanical stress disturbing the electrical sensing signal.
Claims2
A micromechanical semiconductor sensing device comprising:
- a micromechanical sensing structure including a sensing device responsive to an external force on the micromechanical semiconductor sensing device, the micromechanical sensing structure configured to output an electrical sensing signal responsive to the external force;
- and
- means for sensing a mechanical stress in the micromechanical sensing structure due to the external force on the micromechanical semiconductor sensing device;
- and
- means for outputting an electrical disturbance signal responsive to the sensed mechanical stress, wherein the means for sensing the mechanical stress and the means for outputting the electrical disturbance signal are embedded in the micromechanical sensing structure.
A method for sensing an external force on a micromechanical semiconductor sensing device, the method comprising:
- simultaneously obtaining an electrical sensing signal and an electrical disturbance signal, the electrical sensing signal obtained from a first sensing device of a micromechanical sensing structure of the micromechanical semiconductor sensing device, wherein the electrical disturbance signal is obtained for a second sensing device embedded in the micromechanical sensing structure, wherein the electrical sensing signal is responsive to an external force on the micromechanical semiconductor sensing device, and wherein the electrical disturbance signal is responsive to a mechanical stress in the micromechanical sensing structure due to the external force on the micromechanical semiconductor sensing device;
- and
- compensating, based on the electrical disturbance signal, a disturbance in the electrical sensing signal caused by the mechanical stress.
Dependencies are inferred from the claim text.