Actively preventing charge induced leakage of semiconductor devices

A structure for preventing charge induced leakage of a semiconductor device comprising:

• a shield on the semiconductor device, wherein the shield is separated from a first metal interconnect by at least a first lateral spacing and separated from a second metal interconnect by at least a second lateral spacing, the first metal interconnect connects a first doped junction to another first doped junction, and the second metal interconnect connects a second doped junction to another second doped junction, the shield surrounds each of a plurality of first contacts to the first metal interconnect and a plurality of second contacts to the second metal interconnect, the shield configured to contact at least one of the first metal interconnect and the second metal interconnect at all locations where the shield has a vertical overlap between with the respective first metal interconnect and second metal interconnect, the vertical overlap orthogonal to the first lateral spacing and the second lateral spacing;
• and
• a shield bias connected to the shield to terminate an electromagnetic (EM) field on a surface of the shield wherein the shield between the first lateral spacing and the second lateral spacing has a minimum width to prevent formation of a conductive channel between the first doped junction and the second doped junction.