Manufacturing method of substrate, cutting method of processing object and laser processing apparatus
AssigneeAisin Seiki Kabushiki Kaisha
InventorTatsuya Tanigawa
Life of this patent
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Abstract
A manufacturing method of a substrate, the method includes a crack forming process of forming a crack along an interface between a first portion of a processing object and a second portion of the processing object, the crack-forming process forming the crack in a manner that an ultrashort-pulse laser light is irradiated so that a focus point thereof is positioned at the interface or in a vicinity thereof, and a separating process of separating the processing object at the crack, wherein an impurity concentration of the first portion and an impurity concentration of the second portion are different from each other or material of the first portion and material of the second portion are different from each other.
Claims9
A manufacturing method of a substrate, the method comprising:
- a crack forming process of forming a crack along an interface between a first portion of a processing object and a second portion of the processing object, the crack-forming process forming the crack in a manner that an ultrashort-pulse laser light is irradiated so that a focus point of the ultrashort-pulse laser light is positioned at the interface or in a vicinity of the interface;
- and
- a separating process of separating the processing object at the crack, wherein
- an impurity concentration of the first portion and an impurity concentration of the second portion are different from each other or material of the first portion and material of the second portion are different from each other.
A cutting method of a processing object comprising:
- a crack forming process of forming a crack along an interface between a first portion of the processing object and a second portion of the processing object, the crack-forming process forming the crack in a manner that an ultrashort-pulse laser light is irradiated so that a focus point of the ultrashort-pulse laser light is positioned at the interface or in a vicinity of the interface;
- and
- a separating process of separating the processing object at the crack, wherein
- an impurity concentration of the first portion and an impurity concentration of the second portion are different from each other or material of the first portion and material of the second portion are different from each other.
A laser processing apparatus comprising:
- a light source emitting an ultrashort-pulse laser light;
- and
- a control portion forming a crack along an interface between a first portion of a processing object and a second portion of the processing object, the control portion forming the crack in a manner that an ultrashort-pulse laser light is irradiated so that a focus point of the ultrashort-pulse laser light is positioned at the interface or in a vicinity of the interface, wherein
- an impurity concentration of the first portion and an impurity concentration of the second portion are different from each other or material of the first portion and material of the second portion are different from each other.
Dependencies are inferred from the claim text.