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US 9,786,586 B1Granted
Semiconductor package and fabrication method thereof
AssigneeMicron Technology, Inc.
InventorShing-Yih Shih
Life of this patent
Estimating the term…
Abstract
A semiconductor package includes an interconnect component surrounded by a molding compound. The interconnect component comprises a first RDL structure. A second RDL structure is disposed on the interconnect component. A plurality of first connecting elements is disposed on the second RDL structure. A polish stop layer covers a surface of the interconnect component. A plurality of second connecting elements is disposed on and in the polish stop layer. At least one semiconductor die is mounted on the second connecting elements.
Claims20
A semiconductor package, comprising:
- an interconnect component surrounded by a molding compound, wherein the interconnect component comprises a first redistribution layer (RDL) structure;
- a second RDL structure disposed on the interconnect component and on the molding compound, wherein the second RDL structure is electrically connected to the first RDL structure;
- a plurality of first connecting elements disposed on the second RDL structure on a first side of the second RDL structure opposite a second side of the second RDL structure that is disposed on the interconnect component and on the molding compound;
- a polish stop layer covering a surface of the interconnect component on a first side of the interconnect component opposite a second side of the interconnect component on which the second RDL structure is disposed;
- a plurality of second connecting elements disposed on and in a dielectric layer of the first RDL structure, the plurality of second connecting elements disposed on the first side of the interconnect component;
- and
- at least one semiconductor die mounted on at least one of the plurality of second connecting elements.
4 more elements
A semiconductor package, comprising:
- a first redistribution layer (RDL) structure surrounded by a molding compound;
- a second RDL structure disposed on and electrically connected to the first RDL structure;
- a plurality of first connecting elements disposed on the second RDL structure on a first side of the second RDL structure opposite a second side of the second RDL structure that is disposed on the first RDL structure;
- a polish stop layer disposed on the first RDL structure on a first side of the first RDL structure opposite a second side of the first RDL structure on which the second RDL structure is disposed;
- a plurality of second connecting elements formed in the first RDL structure through the first side of the first RDL structure;
- and
- a semiconductor die mounted on at least one second connecting element.
4 more elements
Dependencies are inferred from the claim text.