Apparatus for producing SiC single crystal by solution growth method, and method for producing SiC single crystal by using the production apparatus and crucible used in the production apparatus

A method for producing an SiC single crystal by a solution growth method, the method comprising:

• a step of preparing a seed shaft that extends in a vertical direction and a crucible that includes a cylindrical portion, a bottom portion disposed at a lower end of the cylindrical portion, and an inner lid having a through hole and disposed in the cylindrical portion;
• a step of attaching an SiC seed crystal to a lower end surface of the seed shaft;
• a step of heating the crucible that contains a raw material to produce an SiC solution, wherein the inner lid is positioned below a liquid surface of the produced SiC solution;
• a step of bringing the SiC seed crystal that is attached to the lower end surface of the seed shaft into contact with the SiC solution;
• and
• a step of growing an SiC single crystal on the SiC seed crystal, wherein when growing the SiC single crystal, the inner lid is positioned below a crystal growth surface of the SiC seed crystal.