Back to results
US 9,780,139 B2Granted
Solid state imaging device, manufacturing method of the same, and electronic equipment
AssigneeSony Corporation
InventorsHiroshi Tayanaka, Yuuji Inoue, Masashi Nakata
Life of this patent
Estimating the term…
Abstract
A solid state imaging device that includes a phase difference detection pixel which is a pixel for phase difference detection; a first imaging pixel which is a pixel for imaging and is adjacent to the phase difference detection pixel; and a second imaging pixel which is a pixel for imaging other than the first imaging pixel. An area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel.
Claims19
A solid state imaging device, comprising:
- a phase difference detection pixel;
- a first imaging pixel adjacent to the phase difference detection pixel;
- a first color filter aligned with the first imaging pixel and adjacent to a light incident side of the first imaging pixel;
- a second imaging pixel;
- a second color filter aligned with the second imaging pixel and adjacent to a light incident side of the second imaging pixel;
- a light shielding film of the first imaging pixel, wherein the light shielding film of the first imaging pixel is adjacent to the light incident side of the first imaging pixel;
- a light shielding film of the second imaging pixel, wherein the light shielding film of the second imaging pixel is adjacent to the light incident side of the second imaging pixel, wherein an area of the first color filter is smaller than an area of the second color filter, and wherein an area of the light shielding film of the first imaging pixel is greater than an area of the light shielding film of the second imaging pixel;
- a first additional light shielding film, wherein the first additional light shielding film is provided below the light shielding film of the first imaging pixel and extends from a light incident surface of a semiconductor substrate having the phase difference detection pixel and the imaging pixels;
- and
- a second additional light shielding film, wherein the second additional light shielding film is provided below the light shielding film of the second imaging pixel and extends from the light incident surface of the semiconductor substrate having the phase difference detection pixel and the imaging pixels, wherein a width of the first and second additional light shielding films is a dimension parallel to the light incident surface of the semiconductor substrate, and wherein the first and second additional light shielding films have different widths.
7 more elements
A method of manufacturing a solid state imaging device, comprising:
- forming a phase difference detection pixel;
- forming a first imaging pixel adjacent to the phase difference detection pixel;
- forming a first color filter aligned with the first imaging pixel and adjacent to a light incident side of the first imaging pixel;
- forming a second imaging pixel;
- forming a second color filter aligned with the second imaging pixel and adjacent to a light incident side of the second imaging pixel;
- forming a light shielding film of the first imaging pixel, wherein the light shielding film of the first imaging pixel is adjacent to the light incident side of the first imaging pixel;
- forming a light shielding film of the second imaging pixel, wherein the light shielding film of the second imaging pixel is adjacent to the light incident side of the second imaging pixel, wherein an area of a color filter of the first imaging pixel is smaller than an area of a color filter of the second imaging pixel, and
- wherein an area of a light shielding film of the first imaging pixel is greater than an area of a light shielding film of the second imaging pixel;
- forming a first additional light shielding film, wherein the first additional light shielding film is provided below the light shielding film of the first imaging pixel and extends from a light incident surface of a semiconductor substrate having the phase difference detection pixel and the imagine pixels;
- and
- forming a second additional light shielding film, wherein the second additional light shielding film is provided below the light shielding film of the second imaging pixel and extends from the light incident surface of the semiconductor substrate having the phase difference detection pixel and the imaging pixels, and wherein the first and second additional light shielding films have different widths.
8 more elements
An electronic apparatus, comprising:
- a solid state imaging device including:
- a phase difference detection pixel;
- a first imaging pixel adjacent to the phase difference detection pixel;
- a first color filter aligned with the first imaging pixel and adjacent to a light incident side of the first imaging pixel;
- a second imaging pixel;
- and
- a second color filter aligned with the second imaging pixel and adjacent to a light incident side of the second imagine pixel;
- a light shielding film of the first imaging pixel, wherein the light shielding film of the first imaging pixel is adjacent to the light incident side of the first imaging pixel;
- a light shielding film of the second imaging pixel, wherein the light shielding film of the second imaging pixel is adjacent to the light incident side of the second imaging pixel, wherein an area of the first color filter is smaller than an area of the second color filter, and
- wherein an area of a light shielding film of the first imaging pixel is greater than an area of a light shielding film of the second imaging pixel;
- a first additional light shielding film, wherein the first additional light shielding film is provided below the light shielding film of the first imaging pixel and extends from a light incident surface of a semiconductor substrate having the phase difference detection pixel and the imaging pixels;
- and
- a second additional light shielding film, wherein the second additional light shielding film is provided below the light shielding film of the second imaging pixel and extends from the light incident surface of the semiconductor substrate having the phase difference detection pixel and the imaging pixels, and wherein the first and second additional light shielding films have different widths.
10 more elements
Dependencies are inferred from the claim text.