Semiconductor device, method for manufacturing the same, and rinsing liquid

A method for manufacturing a semiconductor device, the method comprising:

• a sealing composition application process of applying a sealing composition for a semiconductor to at least a bottom face and a side face of a recess portion of a semiconductor substrate, to form a sealing layer for a semiconductor on at least the bottom face and the side face of the recess portion, the sealing composition for a semiconductor including a polymer having a cationic functional group and a weight average molecular weight of from 2,000 to 1,000,000, each of the content of sodium and the content of potassium in the sealing composition for a semiconductor being 10 ppb by mass or less on an elemental basis, and the semiconductor substrate being provided with an interlayer insulating layer having the recess portion and a copper-containing wiring of which at least a part of a surface thereof is exposed on at least a part of the bottom face of the recess portion;
• and
• a removal process of subjecting a surface of the semiconductor substrate at a side at which the sealing layer for a semiconductor has been formed to heat treatment under a temperature condition of from 200° C. to 425° C., to remove at least a part of the sealing layer for a semiconductor that has been formed on an exposed face of the wiring, but leave at least a part of the sealing layer for a semiconductor that covers a side face or recess portion.