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US 9,779,906 B2Granted
Electron emission device and transistor provided with the same
AssigneeKabushiki Kaisha Toyota Chuo Kenkyusho
InventorsTsuyoshi Ishikawa, Takashi Katsuno, Narumasa Soejima
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Abstract
An electron emission device includes a substrate and an electron emission layer. The electron emission layer is provided above the substrate, and is provided with an opening. The electron emission layer has an edge defining the opening and is configured to emit electrons from the edge when the edge is irradiated with light.
Claims15
An electron emission device comprising:
- a substrate;
- and
- an electron emission layer disposed above the substrate, wherein an opening is arranged in the electron emission layer,
- wherein the electron emission layer has an edge defining the opening and is configured to emit electrons from the edge when the edge is irradiated with light.
1 more element
A transistor comprising:
- a substrate;
- a cathode layer disposed above the substrate, wherein an opening is arranged in the cathode layer;
- and
- an anode layer disposed above the cathode layer,
- wherein the cathode layer has an edge defining the opening and is configured to emit electrons from the edge when the edge is irradiated with light.
2 more elements
Dependencies are inferred from the claim text.