Chemical vapor deposition device
AssigneeAltatech Semiconductor
InventorsPatrice Nal, Christophe Borean, Julien Vitiello
Life of this patent
Estimating the term…
Abstract
A reactor device for chemical vapor deposition comprises a reaction chamber having a purge gas inlet. A gas discharge channel is linked to the reaction chamber via a circumferential opening in the inner wall of the chamber. The reaction chamber is arranged such that a purge gas stream flows from the purge gas inlet to the discharge channel. The inner wall of the reaction chamber comprises means for exchanging heat with the purge gas, for example, fins.
Claims18
A reactor device for chemical vapor deposition comprising:
- a reaction chamber having a purge gas inlet;
- a gas discharge channel connected to the reaction chamber by a circumferential opening in an inner wall of the chamber, the reaction chamber being arranged so that a stream of purge gas circulates from the purge gas inlet to the discharge channel;
- wherein the inner wall of the reaction chamber comprises means for exchanging heat with the purge gas.
A gas discharge ring for a chemical vapor deposition reactor device comprising a reaction chamber having a purge gas inlet, a gas discharge channel connected to the chamber via a circumferential opening delimited at least partly by an inner wall of the ring, the ring comprising an outer wall connected to the inner wall by a connecting wall arranged so as to form two annular channels extending on either side of the connecting wall and between the inner and outer walls, said connecting wall comprising holes to form a fluid connection between the channels, the ring being characterized in that the inner wall comprises a plurality of fins.
Dependencies are inferred from the claim text.