Si-containing film forming precursors and methods of using the same
AssigneeL'Air Liquide Societe pour l'Etude et l'Exploitation des Procedes Georges Claude
InventorsJean-Marc Girard, Peng Zhang, Antonio Sanchez, Manish Khandelwal, Gennadiy Itov, Reno Pesaresi
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Abstract
Mono-substituted TSA precursor Si-containing film forming compositions are disclosed. The precursors have the formula: (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom; an isocyanato group; an amino group; an N-containing C4-C10 saturated or unsaturated heterocycle; or an alkoxy group. Methods for forming the Si-containing film using the disclosed mono-substituted TSA precursor are also disclosed.
Claims27
A Si-containing film forming composition comprising a mono-substituted TSA precursor having the formula:
- (SiH3)2N—SiH2—X
- wherein X is selected from an isocyanato group [—NCO];
- an amino group [—NR1R2];
- an N-containing C4-C10 saturated or unsaturated heterocycle;
- or an alkoxy group [—O—R];
- R1, R2 and R each is selected from H;
- a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group;
- provided that if R1═H, then R2≠H or Me.
A method for forming a Si-containing film, the method comprising the steps of:
- introducing into a reactor containing a substrate a vapor including a mono-substituted TSA precursor having a formula (SiH3)2N—SiH2—X, wherein X is selected from a an isocyanato group [—NCO];
- an amino group [—NR1R2];
- a N-containing C4-C10 saturated or unsaturated heterocycle;
- or an alkoxy group —O—R;
- R1, R2 and R each is selected from H;
- a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group;
- or a silyl group SiR′3 with each R′ being independently selected from H;
- a halogen atom selected from Cl, Br, or I;
- a C1-C4 saturated or unsaturated hydrocarbyl group;
- a C1-C4 saturated or unsaturated alkoxy group;
- or an amino group —NR3R4 with each R3 and R4 being selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that if R1═H, then R2≠H or Me;
- depositing at least part of the mono-substituted TSA precursor onto the substrate to form the silicon-containing film on the substrate using a vapor deposition process.
A nitrogen-doped silicon oxide film, the film formed by the process of:
- introducing into a reactor containing a substrate a vapor including a mono-substituted TSA precursor to form a silicon-containing layer on the substrate, the mono-substituted TSA precursor having a formula (SiH3)2N—SiH2—X, wherein X is selected from a halogen atom selected from Cl, Br or I;
- an isocyanato group [—NCO];
- an amino group [—NR1R2];
- a N-containing C4-C10 saturated or unsaturated heterocycle;
- or an alkoxy group [—O—R];
- R1, R2 and R each is selected from H;
- a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group;
- or a silyl group SiR′3 with each R′ being independently selected from H;
- a halogen atom selected from Cl, Br, or I;
- a C1-C4 saturated or unsaturated hydrocarbyl group;
- a C1-C4 saturated or unsaturated alkoxy group;
- or an amino group —NR3R4 with each R3 and R4 being selected from H or a C1-C6 linear or branched, saturated or unsaturated hydrocarbyl group, provided that if R1═H, then R2≠H or Me;
- reacting an oxidizing agent with the silicon-containing layer to form an oxidized silicon-containing layer by introducing the oxidizing agent into the reactor;
- reacting the mono-substituted TSA precursor with the oxidized silicon-containing layer to form a silicon-rich oxidized silicon-containing layer by introducing the mono-substituted TSA precursor into the reactor;
- reacting a nitrogen-containing reactant with the silicon-containing layer to form the nitrogen-doped silicon oxide film by introducing the nitrogen-containing reactant into the reactor.
Dependencies are inferred from the claim text.