Low power threshold integrated micro-plasma limiter
AssigneeNorthrop Grumman Systems Corporation
InventorsBenjamin D. Poust, Michael Conrad Battung, Dino Ferizovic, Patty P. Chang-Chien
Life of this patent
Estimating the term…
Loading patent…
AssigneeNorthrop Grumman Systems Corporation
InventorsBenjamin D. Poust, Michael Conrad Battung, Dino Ferizovic, Patty P. Chang-Chien
Estimating the term…
A plasma power limiter fabricated using wafer-level fabrication techniques with other circuit elements. The power limiter includes a signal substrate having a first side and a second side, an input signal line formed on the first side, a signal transmission line formed on the second side and an output signal line formed on the first side. The power limiter also includes a ground substrate having a first side and a second side, and being bonded to the signal substrate to form a sealed cavity including an ionizable gas therebetween. The ground substrate includes a ground metal layer formed on the second side. A signal propagating on the input signal line at a power level greater than a threshold power level generates a voltage potential across the cavity that ionizes the gas and generates a plasma discharge, and limits power of the output signal coupled to the output signal line.
A plasma power limiter comprising:
A plasma power limiter comprising:
A plasma power limiter comprising:
A plasma power limiter comprising:
A plasma power limiter comprising:
A plasma power limiter comprising:
A plasma power limiter comprising:
A plasma power limiter comprising:
Dependencies are inferred from the claim text.