Bonding wire for semiconductor device
AssigneesNippon Micrometal Corporation, Nippon Steel & Sumikin Materials Co., Ltd.
InventorsTakashi Yamada, Daizo Oda, Ryo Oishi, Tomohiro Uno
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Abstract
A bonding wire for a semiconductor device including a coating layer having Pd as a main component on the surface of a Cu alloy core material and a skin alloy layer containing Au and Pd on the surface of the coating layer has a Cu concentration of 1 to 10 at % at an outermost surface thereof and has the core material containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1 to 3.0% by mass, thereby achieving improvement in 2nd bondability and excellent ball bondability in a high-humidity heating condition. Furthermore, a maximum concentration of Au in the skin alloy layer is preferably 15 at % to 75 at %.
Claims7
A bonding wire for a semiconductor device comprising:
- a core material having Cu as a main component and containing a metallic element of Group 10 of the Periodic Table of Elements in a total amount of 0.1% by mass or more and 3.0% by mass or less;
- a coating layer having Pd as a main component provided on a surface of the core material;
- and
- a skin alloy layer containing Au and Pd provided on a surface of the coating layer,
- wherein a concentration of Cu at an outermost surface of the wire is 1 at % or more and 10 at % or less, and the metallic element of Group 10 of the Periodic Table of Elements comprises Ni.
Dependencies are inferred from the claim text.