Continuous whole-chip 3-dimensional DEP cell sorter and related fabrication method

A 3-dimensional dielectrophoretic (DEP) sorting device, the device comprising:

• a first electrode;
• a second electrode;
• and
• an electrically-insulating layer sandwiched between the first electrode and the second electrode, wherein:
• the electrically-insulating layer includes:
• a fluid flow passage, the fluid flow passage having a cross-section partially defined by the first electrode and the second electrode;
• a first side passage that is parallel to the fluid flow passage within a DEP-separation region of the device and separated from the fluid flow passage by a first thin, deformable wall;
• and
• a second side passage that is parallel to the fluid flow passage within the DEP-separation region and separated from the fluid flow passage by a second thin, deformable wall, wherein:
• the first side passage and the second side passage are hermetically sealed from the fluid flow passage, and
• application of pressurized gas or fluid to the first side passage and the second side passage causes the first thin, deformable wall and the second thin, deformable wall to bulge into the fluid flow passage.

A 3-dimensional dielectrophoretic (DEP) sorting device, the device comprising:

• a first electrode layer;
• a second electrode layer;
• an electrically-insulating layer interposed between the first electrode layer and the second electrode layer and having a first sub-layer and a second sub-layer;
• a first passage located in the first sub-layer;
• and
• a second passage located in the second sub-layer;
• wherein:
• the first electrode layer, the second electrode layer, and the electrically-insulating layer form a substantially planar assembly,
• the first electrode layer is on an opposite side of the first sub-layer from the second sub-layer,
• the second electrode layer is on an opposite side of the second sub-layer from the first sub-layer,
• the first passage and the second passage follow a common path within a DEP-separation region of the electrically-insulating layer and are in direct fluid communication with one another within the DEP-separation region,
• the first passage and the second passage each have a different cross-sectional width perpendicular to the common path and perpendicular to a normal of the substantially planar assembly, and
• the first passage diverges from the second passage in a post-DEP-separation region, the post-DEP-separation region located downstream of the DEP-separation region.