Modulation circuit and semiconductor device including the same
AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorKoichiro Kamata
Life of this patent
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Abstract
A modulation circuit includes a load and a transistor serving as a switch. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. The off-state current of the transistor is 1×10−13 A or less. A modulation circuit includes a load, a transistor serving as a switch, and a diode. The load, the transistor, and the diode are connected in series between the terminals of an antenna. The transistor has an oxide semiconductor layer in which hydrogen concentration is 5×1019/cm3 or less. An off-state current of the transistor is 1×10−13 A or less. On/off of the transistor is controlled in accordance with a signal inputted to a gate of the transistor. The load is a resistor, a capacitor, or a combination of a resistor and a capacitor.
Claims21
A semiconductor device comprising:
- a load;
- and
- a transistor, the transistor comprising an oxide semiconductor layer, the oxide semiconductor layer comprising a channel formation region, wherein the load is electrically connected to one of a source or a drain of the transistor,
- wherein a carrier concentration in the oxide semiconductor layer is less than 1×1014/cm3,
- wherein hydrogen concentration of the oxide semiconductor layer is less than or equal to 5×1019/cm3, and
- wherein an off-state current per channel width of the transistor is less than or equal to 1×10−16 A/μm at a temperature within a range from −30° C. to 120° C.
A semiconductor device comprising:
- a diode;
- and
- a transistor, the transistor comprising an oxide semiconductor layer, the oxide semiconductor layer comprising a channel formation region, wherein the diode is electrically connected to one of a source or a drain of the transistor,
- wherein a carrier concentration in the oxide semiconductor layer is less than 1×1014/cm3,
- wherein hydrogen concentration of the oxide semiconductor layer is less than or equal to 5×1019/cm3, and
- wherein an off-state current per channel width of the transistor is less than or equal to 1×10−16 A/μm at a temperature within a range from −30° C. to 120° C.
A semiconductor device comprising:
- a load;
- and
- a transistor, the transistor comprising an oxide semiconductor layer, the oxide semiconductor layer comprising a channel formation region, wherein the load is electrically connected to one of a source or a drain of the transistor,
- wherein a carrier concentration in the oxide semiconductor layer is less than 1×1014/cm3, and
- wherein an off-state current per channel width of the transistor is less than or equal to 1×10−16 A/μm at a temperature within a range from −30° C. to 120° C.
A semiconductor device comprising:
- an antenna;
- and
- a modulation circuit comprising:
- a load;
- and
- a transistor comprising an oxide semiconductor layer, the oxide semiconductor layer comprising a channel formation region,
- wherein a carrier concentration in the oxide semiconductor layer is less than 1×1014/cm3,
- wherein one of a source and a drain of the transistor is electrically connected to one terminal of the antenna through the load, and the other of the source and the drain of the transistor is electrically connected to the other terminal of the antenna, and
- wherein an off-state current per channel width of the transistor is less than or equal to 1×10−16 A/μm at a temperature within a range from −30° C. to 120° C.
A semiconductor device comprising:
- a load;
- and
- a transistor, the transistor comprising an oxide semiconductor layer, the oxide semiconductor layer comprising a channel formation region, wherein the load is electrically connected to one of a source or a drain of the transistor,
- wherein hydrogen concentration of the oxide semiconductor layer is less than or equal to 5×1019/cm3,
- wherein an off-state current per channel width of the transistor is less than or equal to 1×10−16 A/μm at a temperature within a range from −30° C. to 120° C.,
- wherein the oxide semiconductor layer comprises indium, zinc and gallium, and
- wherein the oxide semiconductor layer has a microcrystalline structure.
Dependencies are inferred from the claim text.