Semiconductor package and method of forming the same
AssigneeTaiwan Semiconductor Manufacturing Company, Ltd.
InventorsChi-Hsi Wu, Der-Chyang Yeh, Hsien-Wei Chen, Jie Chen
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Abstract
An embodiment is a method including forming a first passive device in a first wafer, forming a first dielectric layer over a first side of the first wafer, forming a first plurality of bond pads in the first dielectric layer, planarizing the first dielectric layer and the first plurality of bond pads to level top surfaces of the first dielectric layer and the first plurality of bond pads with each other, hybrid bonding a first device die to the first dielectric layer and at least some of the first plurality of bond pads, and encapsulating the first device die in a first encapsulant.
Claims20
A method comprising:
- forming a first passive device in a first wafer;
- forming a first dielectric layer over a first side of the first wafer;
- forming a first plurality of bond pads in the first dielectric layer;
- planarizing the first dielectric layer and the first plurality of bond pads to level top surfaces of the first dielectric layer and the first plurality of bond pads with each other;
- hybrid bonding a first device die to the first dielectric layer and at least some of the first plurality of bond pads;
- and
- encapsulating the first device die in a first encapsulant.
A method comprising:
- forming a first package comprising:
- forming a passive device and a through via in a first wafer;
- forming a first redistribution structure over a first side of the first wafer, the first redistribution structure comprising a first plurality of bond pads in a first dielectric layer, top surfaces of the first plurality of bond pads substantially coplanar with a top surface of the first dielectric layer;
- forming a first electrical connector on one of the first plurality of bond pads;
- bonding a first device die to the first redistribution structure, a dielectric layer of the first device die being bonded to the first dielectric layer, and metal pads in the first device die being bonded to the first plurality of bond pads through metal-to-metal bonding;
- and
- encapsulating the first device die in a first molding compound.
A structure comprising:
- a first substrate comprising a first passive device and a first through via, the first passive device being embedded in the first substrate, the first through via extending through the first substrate;
- a first redistribution structure on a first side of the first substrate, the first redistribution structure comprising:
- a plurality of metallization patterns comprising a first plurality of bond pads;
- and
- a first plurality of dielectric layers, with the plurality of metallization patterns located in the first plurality of dielectric layers, and the first plurality of dielectric layers comprises a first dielectric layer, with a first surface of the first dielectric layer being substantially coplanar with first surfaces of the first plurality of bond pads;
- and
- a device die comprising:
- a second plurality of bond pads bonded to the first plurality of bond pads through metal-to-metal bonding;
- and
- a second plurality of dielectric layers comprising a second dielectric layer, with the second dielectric layer having a second surface substantially coplanar with second surfaces of the second plurality bond pads, wherein the first dielectric layer is bonded to the second dielectric layer through dielectric-to-dielectric bonds.
Dependencies are inferred from the claim text.