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US 9,755,586 B2Granted
Radiofrequency power limiter, and associated radiofrequency emitter and/or receiver chain and low-noise amplifying stage
AssigneeThales
InventorsJean-Philippe Plaze, Vincent Petit, Benoît Mallet-Guy
Life of this patent
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Abstract
This radiofrequency power limiter includes at least one transistor, a drain of the transistor being directly connected to a mesh connecting an input to an output of the limiter, a source of the transistor being connected to a common reference potential, and a gate of the transistor being connected to a common control potential. The transistor is not biased between its drain and its source during operation of the limiter.
Claims11
A radiofrequency power limiter comprises:
- at least one transistor,
- a drain of said transistor being directly connected to a mesh connecting an input and an output of the limiter,
- a source of said transistor being connected to a common reference potential, and
- a gate of said transistor being connected to a common control potential (Voff), said transistor not being biased between its drain and its source during the operation of the limiter,
- wherein the radiofrequency power limiter further comprises at least first and second transistors, and
- wherein the mesh connecting the input and the output of the radiofrequency power limiter comprises, between the connection nodes of the drains of the first and second transistors, an intermediate inductor.
3 more elements
Dependencies are inferred from the claim text.