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US 9,755,579 B1Granted
Amplifier devices with envelope signal shaping for gate bias modulation
AssigneeNXP USA, Inc.
InventorsAbdulrhman M. S. Ahmed, Joseph Staudinger
Life of this patent
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Abstract
The embodiments described herein include amplifiers configured for use in radio frequency (RF) applications. In accordance with these embodiments, the amplifiers are implemented to generate a shaped envelope signal, and to apply the shaped envelope signal to transistor gate(s) of the amplifier to provide gate bias modulation. So configured, the shaped envelope signal may facilitate high linearity in the amplifier.
Claims20
An apparatus comprising:
- an envelope signal generator, the envelope signal generator configured to receive a radio frequency (RF) signal and generate an envelope signal corresponding to the RF signal;
- a first amplifier, the first amplifier including at least a first transistor, the first transistor including a first gate configured to receive the RF signal;
- a signal shaping device, the signal shaping device configured to selectively shape the envelope signal and apply the selectively shaped envelope signal to the first gate to modulate a bias applied to the first gate;
- and
- an RF signal attenuator, the RF signal attenuator configured to selectively attenuate the RF signal prior to the RF signal being received at the first gate.
2 more elements
An apparatus comprising:
- an envelope signal generator, the envelope signal generator configured to receive a radio frequency (RF) signal and generate an envelope signal corresponding to the RF signal;
- an envelope signal attenuator, the envelope signal attenuator configured to selectively attenuate the envelope signal;
- an envelope signal phase shifter, the envelope signal phase shifter configured to selectively phase shift the envelope signal;
- an RF signal attenuator, the RF signal attenuator configured to selectively attenuate the RF signal;
- an RF signal phase shifter, the RF signal phase shifter configured to selectively phase shift the RF signal;
- a first amplifier, the first amplifier including at least a first transistor, the first transistor including a first gate configured to receive the selectively attenuated and selectively phase shifted RF signal;
- and
- wherein the envelope signal attenuator, the envelope signal phase shifter, the RF signal attenuator and the RF signal phase shifter are digitally controlled.
5 more elements
An apparatus comprising:
- an envelope signal generator, the envelope signal generator configured to receive a radio frequency (RF) signal and generate an envelope signal corresponding to the RF signal;
- a first amplifier, the first amplifier including at least a first transistor, the first transistor including a first gate configured to receive the RF signal;
- a signal shaping device, the signal shaping device configured to selectively shape the envelope signal and apply the selectively shaped envelope signal to the first gate to modulate a bias applied to the first gate;
- wherein the signal shaping device includes an envelope signal attenuator, the envelope signal attenuator configured to selectively attenuate the envelope signal, and wherein the envelope signal attenuator is configured to be digitally controlled, and wherein the envelope signal attenuator is configured to be digitally controlled based on control values stored in a look up table (LUT).
1 more element
Dependencies are inferred from the claim text.