Method for manufacturing gallium and nitrogen bearing laser devices with improved usage of substrate material

A method for manufacturing an article using a gallium and nitrogen containing laser diode device, the method comprising:

• providing a gallium and nitrogen containing substrate having a surface region;
• forming epitaxial material overlying the surface region, the epitaxial material comprising an n-type cladding region, an active region comprising of at least one active layer overlying the n-type cladding region, and a p-type cladding region overlying the active layer region;
• patterning the epitaxial material to form a plurality of dies, each of the dies corresponding to at least one laser device, characterized by a first pitch between a pair of dies, the first pitch being less than a design width;
• transferring at least a portion of the plurality of dies to a carrier wafer such that each pair of transferred dies is configured with a second pitch between each pair of dies, the second pitch being larger than the first pitch and corresponding to the design width, the transferring comprising:
• selectively removing at least a portion of a release region of one or more dies while leaving an anchor region intact between the one or more dies and the gallium and nitrogen containing substrate,
• selectively bonding the one or more dies to the carrier wafer,
• releasing the one or more dies from the gallium and nitrogen containing substrate by separating the anchor region associated with each of the one or more dies while a portion of the epitaxial material remains bonded to the carrier wafer;
• and
• using at least one of the dies in an application selected from at least one of a laser display or a light.