Device including quantum dots

A method for preparing a light emitting device including a first electrode and a second electrode, an emissive layer comprising quantum dots disposed between the first electrode and the second electrode, a first layer disposed between the first electrode and the layer comprising quantum dots, and a first interfacial layer disposed at the interface between a surface of the layer comprising quantum dots and the first layer, the method comprising:

• forming the first electrode on a substrate;
• forming the first layer thereover, the first layer comprising a first charge transport material comprising an inorganic material comprising a metal chalcogenide;
• applying the first interfacial layer thereover for protecting the quantum dots included in the emissive layer from charge quenching sites in a contiguous device layer, the first interfacial layer being applied as a distinct layer having a thickness in a range from a monolayer thickness to about 5 nm and comprising a material that is non-quenching to quantum dot photoluminescent emission and does not impede charge flow;
• applying the emissive layer comprising quantum dots thereover;
• and
• forming the second electrode thereover.