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US 9,755,169 B2Granted
Nonvolatile memory device
AssigneeIucf-Hyu
InventorsJea Gun Park, Sung Ho Seo, Woo Sik Nam, Jong Sun Lee
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Abstract
Provided is a nonvolatile memory device. The nonvolatile memory device includes: first and second electrodes spaced from each other; at least one nano crystal layer disposed between the first and second electrodes; and first and second material layers respectively disposed between the first and second electrodes and the nano crystal layer and having a bistable conductive property, wherein the first and second material layers are formed asymmetrical to each other.
Claims14
A nonvolatile memory device comprising:
- first and second electrodes spaced from each other;
- at least one nano crystal layer disposed between the first and second electrodes;
- and
- first and second material layers respectively disposed between the first electrode and the nano crystal layer and between the second electrode and the nano crystal layer,
- wherein the first and second material layers are formed with different thicknesses,
- wherein the first material layer is composed of a first conductive organic layer with one side being in contact with the first electrode and the other side being in contact with the nano crystal layer,
- wherein the second material layer is composed of a second conductive organic layer, a first buffer layer with one side being in contact with the nano crystal layer and the other side being in contact with the second conductive organic layer, and a second buffer layer with one side being in contact with the second conductive organic layer and the other side being in contact with the second electrode, and
- wherein the first buffer layer has a thickness of 0.2 nm and the second buffer layer has a thickness of 0.6 nm.
5 more elements
A nonvolatile memory device comprises:
- a first electrode;
- a first conductive organic layer formed on and contacting the first electrode;
- a nano crystal layer formed on and contacting the first conductive organic layer;
- a first buffer layer formed on and contacting the nano crystal layer;
- a second conductive organic layer formed on and contacting the first buffer layer;
- a second buffer layer formed on and contacting the second conductive organic layer;
- and
- a second electrode formed on and contacting the second buffer layer;
- wherein the first buffer layer has a thickness of 0.2 nm and the second buffer layer has a thickness of 0.6 nm;
- and
- wherein the first and the second buffer layers facilitate charge transfer in a forward bias when a high voltage and a low voltage are respectively applied to the first and the second electrodes and suppresses charge transfer in a reverse bias when a low voltage and a high voltage are respectively applied to the first and the second electrodes.
8 more elements
Dependencies are inferred from the claim text.