Thin film transistor
AssigneeFUJIFILM Corporation
InventorHiroo Takizawa
Life of this patent
Estimating the term…
Abstract
Provided is a thin film transistor including a gate electrode, a semiconductor layer, a gate insulating layer provided between the gate electrode and the semiconductor layer and formed of an organic polymer compound, and a source electrode and a drain electrode provided in contact with the semiconductor layer and connected via the semiconductor layer, on a substrate, in which the content of metals selected from Mg, Ca, Ba, Al, Sn, Pb, Cr, Mn, Fe, Ni, Cu, Zn, and Ag in the gate insulating layer is 10 ppb to 1 ppm in terms of total amount, or the content of non-metal ionic materials selected from halogen ions, sulfate ions, nitrate ions, and phosphate ions is 1 ppm to 100 ppm in terms of total amount.
Claims9
A thin film transistor, comprising:
- a gate electrode:
- a semiconductor layer;
- a gate insulating layer provided between the gate electrode and the semiconductor layer and formed of an organic polymer compound;
- and
- a source electrode and a drain electrode provided in contact with the semiconductor layer and connected via the semiconductor layer, on a substrate, wherein
- in the gate insulating layer, the content of metals selected from Mg, Ca, Ba, Al, Sn, Pb, Cr, Mn, Fe, Ni, Cu, Zn, and Ag is 12 ppb to 100 ppb in terms of total amount, and the content of non-metal ionic materials selected from halogen ions, sulfate ions, nitrate ions, and phosphate ions is 3 ppm to 50 ppm in terms of total amount.
A thin film transistor, comprising:
- a gate electrode;
- a semiconductor layer;
- a gate insulating layer provided between the gate electrode and the semiconductor layer and formed of an organic polymer compound;
- and
- a source electrode and a drain electrode provided in contact with the semiconductor layer and connected via the semiconductor layer, on a substrate,
- wherein, in the gate insulating layer, the content of metals selected from Mg, Ca, Ba, Al, Sn, Pb, Cr, Mn, Fe, Ni, Cu, Zn, and Ag is 12 ppb to 100 ppb in terms of total amount, and the content of non-metal ionic materials selected from halogen ions, sulfate ions, nitrate ions, and phosphate ions is 3 ppm to 50 ppm in terms of total amount, and
- the organic polymer compound is an organic polymer compound selected from polyvinylphenol and polysilsesquioxane.
Dependencies are inferred from the claim text.