Memory cell structures
AssigneeMicron Technology, Inc.
InventorScott E. Sills
Life of this patent
Estimating the term…
Abstract
The present disclosure includes memory cell structures and method of forming the same. One such memory cell includes a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode, a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode, and a storage element between the first electrode and the electrode contact portion of the second electrode.
Claims20
A memory cell, comprising:
- a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode;
- a first dielectric material formed on the first electrode having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode;
- a second electrode, including an electrode contact portion of the second electrode, having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode, wherein the second electrode is over the first electrode;
- and
- a storage element between the first electrode and the electrode contact portion of the second electrode, wherein the storage element is formed on an upper surface of the first electrode and an upper surface of the first dielectric material, and wherein filament nucleation for the storage element is achieved between the first electrode and the second electrode.
A memory cell, comprising:
- a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode formed adjacent to a first dielectric material having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode formed in a valley between the first electrode and an adjacent electrode;
- a storage element formed on the first electrode and an upper surface of the first dielectric material;
- and
- a second dielectric material formed on a top surface of the storage element and having a valley formed therein, wherein the second dielectric material has sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrodes;
- and
- a contact portion of a second electrode formed in the valley such that the contact portion has non-vertical sidewalls defined by the valley, wherein an active region of the storage element is localized between the first electrode and the contact portion of the second electrode.
A method of forming a memory cell, comprising:
- forming a first electrode having sidewalls angled less than 90 degrees in relation to a bottom surface of the first electrode;
- forming a first dielectric material on the first electrode having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode;
- forming a resistance variable material on the first electrode and the first dielectric material;
- and
- forming a second electrode having sidewalls angled less than 90 degrees in relation to the bottom surface of the first electrode on a top surface of the resistance variable material, wherein the sidewalls of the first electrode converge toward resistance variable material, wherein the sidewalls of the second electrode converge toward the resistance variable material, and wherein an active region of the resistance variable material is localized between the first electrode and the second electrode.
Dependencies are inferred from the claim text.