Multilayered magnetic thin film stack and nonvolatile memory device having the same

A multilayered magnetic thin-film stack comprising:

• a tunneling harrier layer;
• a magnetic pinned layer disposed on a first surface of the tunneling barrier layer;
• and
• a magnetic free layer disposed on a second surface of the tunneling barrier layer, wherein the second surface is opposite to the first surface,
• wherein at least one of the magnetic pinned layer and the magnetic free layer comprises a FeZr alloy layer and a first magnetic layer having a (001) body-centered cubic (bcc) structure between the FeZr alloy layer and the tunneling barrier layer,
• wherein the FeZr alloy layer has a mixed crystalline phase including bcc Fe and hexagonal close-packed (hcp) Zr,
• wherein the FeZr alloy layer has a first surface on which the first magnetic layer is disposed, and a second surface opposite to the first surface of the FeZr alloy layer, and the multilayered magnetic thin-film stack further comprises a second magnetic layer disposed on the second surface of the FeZr alloy layer,
• wherein the second magnetic layer comprises a multilayered structure, the multilayered structure comprising a super-lattice structure including at least one non-magnetic metal layer and at least one cobalt (Co)-containing magnetic layer alternately stacked with the at least one non-magnetic metal layer, the at least one non-magnetic metal layer comprising Platinum (Pt), rhodium (Rh), hafnium (Hf), palladium (Pd), tantalum (Ta), osmium (Os), germanium (Ge), iridium Or), gold (Au), silver (Ag), or an alloy thereof, the first magnetic layer and the second magnetic layer being magnetically coupled via the FeZr alloy layer so that a stack comprising the first magnetic layer, the FeZr alloy layer, and the second magnetic layer functions as a ferromagnetic layer, and
• wherein the multilayered structure has a face-centered cubic (fcc) (111) close-packed growth crystalline plane.