Semiconductor light emitting device and method for manufacturing same

A semiconductor light emitting device, comprising:

• a semiconductor layer including a first semiconductor layer, a second semiconductor layer, a light emitting layer, a first surface, and a second surface, the light emitting layer being provided between the first semiconductor layer and the second semiconductor layer, the second surface opposing the first surface;
• a p-side electrode electrically connected to the second semiconductor layer;
• an n-side electrode electrically connected to the first semiconductor layer;
• a first p-side pillar provided on the second surface side and electrically connected to the p-side electrode;
• a first n-side pillar provided on the second surface side and electrically connected to the n-side electrode;
• a first insulating layer provided between the first p-side pillar and the first n-side pillar, on an outer side of a side surface of the first p-side pillar, on an outer side of a side surface of the first n-side pillar, and on an outer side of a side surface of the semiconductor layer;
• a fluorescer layer provided on the first surface of the first semiconductor layer and on the first insulating layer, the fluorescer layer including a fluorescer;
• a second insulating layer provided as one body in at least a portion of an outer side of a side surface of the first insulating layer and at least a portion of an outer side of a side surface of the fluorescer layer, the second insulating layer being made of a material different from the first insulating layer, the second insulating layer including a material being light-reflective;
• a p-side interconnect electrically connected to the first p-side pillar, the p-side interconnect extending onto the second insulating layer across the first insulating layer;
• and
• an n-side interconnect electrically connected to the first n-side pillar, the n-side interconnect extending onto the second insulating layer;
• the first insulating layer contacting the first p-side pillar, the first n-side pillar, the p-side interconnect, and the n-side interconnect, and
• at least a portion of the second insulating layer contacting the side surface of the first insulating layer, the side surface of the fluorescer layer, the p-side interconnect, and the n-side interconnect.