US 9,755,119 B2Granted

Light emitting device and method of manufacturing light emitting device

AssigneeNichia Corporation

InventorsAkinori Yoneda, Shinji Nakamura, Yoshiyuki Aihara

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Abstract

A method of manufacturing a light emitting device includes preparing wafer with a plurality of light emitting elements arrayed on a growth substrate, on a first side of a semiconductor stacked layer body, forming a resin layer which includes metal wires respectively connected to a p-side electrode and an n-side electrode, forming a groove by removing at least portion of the resin layer from an upper surface side in a boundary region between the light emitting elements and exposing end surfaces of metal wires which are internal conductive members on an inner side surface defining a groove, forming electrodes for external connection respectively connecting to exposed end surfaces of metal wires, and singulating the wafer into a plurality of singulated light emitting elements.

Claims20

Dependent claims

A method of manufacturing a light emitting device having a semiconductor light emitting element comprising a semiconductor stacked layer body including a stack of a p-type semiconductor layer, and an n-type semiconductor layer;

a p-side electrode electrically connected to the p-type semiconductor layer;
and an n-side electrode electrically connected to the n-type semiconductor layer, the p-side electrode and the n-side electrode being disposed on a first side of the semiconductor stacked layer body, the method comprising:
preparing a wafer having a plurality of semiconductor light emitting elements disposed on a growth substrate in at least one array;
forming a resin layer embedding a p-side internal conductive member connected to the p-side electrode and an n-side internal conductive member connected to the n-side electrode on a surface of the first side of the semiconductor stacked layer body;
exposing an internal conductive member, in a boundary region between the plurality of semiconductor light emitting elements, and removing at least a part of the resin layer with the p-side internal conductive member and the n-side internal conductive member respectively present in a range of the resin layer to be removed, in a thickness direction from an upper surface of the resin layer, to expose the p-side internal conductive member and the n-side internal conductive member;
forming an electrode for p-side external connection electrically connected to the exposed portion of the p-side internal conductive member, and forming an electrode for n-side external connection electrically connected to the exposed portion of the n-side internal conductive member;
and
singulating the wafer into a plurality of singulated semiconductor light emitting elements.

5 more elements

A light emitting device comprising:

a semiconductor light emitting element comprising:
a semiconductor stacked layer body having a first side and an opposing second side, the semiconductor stacked layer body including a stack of a p-type semiconductor layer, and an n-type semiconductor layer,
a p-side electrode electrically connected to the p-type semiconductor layer, and
an n-side electrode electrically connected to the n-type semiconductor layer,
wherein the p-side electrode and the n-side electrode are disposed on the first side of the semiconductor stacked layer body;
and
a support member having a resin layer disposed on the first side of the semiconductor stacked layer body, wherein the resin layer does not extend past the second side of the semiconductor stacked layer body in a direction from the first side of the semiconductor stacked layer body toward the second side of the semiconductor stacked layer body;
wherein the support member has an electrode for p-side external connection and an electrode for n-side external connection disposed on one of its side surfaces, and a p-side internal conductive member electrically connecting the p-side electrode and the electrode for p-side external connection and an n-side internal conductive member electrically connecting the n-side electrode and the electrode for n-side external connection in the resin layer,
wherein, at the side surface on which the electrode for p-side external connection and the electrode for n-side external connection are disposed, (i) a surface which includes an end portion of a side where the semiconductor light emitting element is disposed, and (ii) a surface formed with the electrode for p-side external connection or the electrode for n-side external connection, are not co-planar with each other, and
wherein a surface that includes an end portion of a side where the semiconductor light emitting element is located is positioned inward of a surface formed with the electrode for p-side external connection or the electrode for n-side external connection.

7 more elements

Dependencies are inferred from the claim text.