LED die with barrier layer
AssigneeAdvanced Optoelectronics Technology, Inc.
InventorsChien-Shiang Huang, Tzu-Chien Hung
Life of this patent
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Abstract
An LED die includes a base, and an N-typed semiconductor layer, an active layer and a P-typed semiconductor layer formed on the base that order. The LED die also includes an N-electrode and a P-electrode. The N-electrode is arranged on the N-typed semiconductor layer and electrically connected therewith. The P-electrode is arranged on the P-typed semiconductor layer and electrically connected therewith. The LED die further includes a barrier layer arranged between the P-typed semiconductor layer and the P-electrode. The barrier layer includes at least two materials of Cr, Ni and Ti. The at least two materials of Cr, Ni and Ti are stacked together to form the barrier layer.
Claims2
A LED die, comprising:
- a base;
- an N-typed semiconductor layer, an active layer and a P-typed semiconductor layer formed on the base in that order;
- an N-electrode formed on and electronically connected to the N-typed semiconductor layer;
- a P-electrode formed on and electronically connected to the P-typed semiconductor layer;
- a first insulating layer, the first insulating layer comprising a first insulating part and a second insulating part, the first insulating part formed on the N-typed semiconductor layer, and the second insulating part formed on the P-typed semiconductor layer;
- and
- a barrier layer formed between the P-electrode and the P-typed semiconductor layer;
- the barrier layer comprising at least two layers, each layer made of one material selected from at least Cr, Ni and Ti, each of the at least two layers made of a different material, the at least two layers stacked on the P-typed semiconductor layer;
- wherein the barrier layer comprises a first barrier part and a second barrier part, the first barrier part and the second barrier part are spaced apart from each other, the first barrier part is directly formed on the N-typed semiconductor layer, and the second barrier part is formed on the P-typed semiconductor layer;
- wherein through holes are defined on the first insulating part and the second insulating part, a number of the through holes on the second insulating part is larger than a number of the through holes on the first insulating part;
- wherein the second barrier part comprises a main body, a horizontal area of the main body is smaller than an area of a top surface of the P-typed semiconductor layer, and the through holes of the second insulating part are located on the main body;
- and
- wherein the second barrier part further comprises a side wall, the side wall extends down and vertically from a periphery of the main body.
Dependencies are inferred from the claim text.