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US 9,755,111 B2Granted
Active region containing nanodots (also referred to as “quantum dots”) in mother crystal formed of zinc blende-type (also referred to as “cubic crystal-type”) AlyInxGal-y-xN Crystal (y[[□]][≧] 0, x > 0) grown on Si substrate, and light emitting device using the same (LED and LD)
AssigneesNitto Optical Co., Ltd., Solartes Lab., Ltd.
InventorsKazutaka Terashima, Suzuka Nishimura, Muneyuki Hirai
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Abstract
A structure of a high luminance LED and a high luminance LD is provided. The present invention provides a light emitting device containing, on a zinc blend-type BP layer formed on an Si substrate, an AlyInxGazN (y≧0, x>0) crystal as a mother crystal maintaining the zinc blend-type crystal structure and In dots having an In concentration higher than that of the AlyInxGazN (y≧0, x>0) crystal as the mother crystal.
Claims9
A light emitting device, comprising:
- an Si substrate;
- a buffer layer formed on the Si substrate, the buffer layer containing a BP crystal which contains boron and phosphide;
- an n-type GaN-based crystal formed on the buffer layer containing the BP crystal;
- and
- an active region containing a zinc blende-type Aly1Inx1Ga1-y1-x1N (y1≧0, x1>0) mother crystal formed on the n-type GaN-based crystal, and Aly2Inx2Ga1-y2-x2N (y2≧0, x2>0) nanodots formed in the zinc blende-type Aly1Inx1Ga1-y1-x1N (y1≧0, x1>0) mother crystal, the Aly2Inx2Ga1-y2-x2N (y2≧0, x2>0) nanodots having an In concentration higher than that of the zinc blende-type Aly1Inx1Ga1-y1-x1N (y1≧0, x1>0) mother crystal;
- wherein the Si substrate is a crystal substrate obtained as a result of being inclined at an angle in the range of 5 degrees or greater and 10 degrees or less from a (100) plane toward a (110) plane.
3 more elements
A light emitting device, comprising:
- an Si substrate;
- a buffer layer formed on the Si substrate, the buffer layer containing a BP crystal which contains boron and phosphide;
- an n-type GaN-based crystal formed on the buffer layer containing the BP crystal;
- an AlyGa1-yN crystal having a zinc blende-type structure formed on the n-type GaN-based crystal;
- and
- an active region containing a zinc blende-type Aly1Inx1Ga1-y1-x1N (y1≧0, x1>0) mother crystal formed on the AlyGa1-yN crystal having a zinc blende-type structure, and Aly2Inx2Ga1-y2-x2N (y2≧0, x2>0) nanodots formed in the zinc blende-type Aly1Inx1Ga1-y1-x1N (y1≧0, x1>0) mother crystal, the Aly2Inx2Ga1-y2-x2N (y2≧0, x2>0) nanodots having an In concentration higher than that of the zinc blende-type Aly1Inx1Ga1-y1-x1N (y1≧0, x1>0) mother crystal;
- wherein the active region has a surface flattened by amorphous-like Inx3Ga1-x3N having incomplete crystallinity formed in a gap among the Aly2Inx2Ga1-y2-x2N (y2≧0, x2>0) nanodots so as to fill the gap.
4 more elements
A semiconductor laser, comprising:
- an Si substrate;
- a buffer layer formed on the Si substrate, the buffer layer containing a BP crystal which contains boron and phosphide;
- an n-type GaN-based crystal formed on the buffer layer containing the BP crystal;
- an AlyGa1-yN crystal having a zinc blende-type structure formed on the n-type GaN-based crystal;
- and
- an active region containing a zinc blende-type Aly1Inx1Ga1-y1-x1N (y1≧0, x1>0) mother crystal formed on the AlyGa1-yN crystal having a zinc blende-type structure, and Aly2Inx2Ga1-y2-x2N (y2≧0, x2>0) nanodots formed in the zinc blende-type Aly1Inx1Ga1-y1-x1N (y1≧0, x1>0) mother crystal, the Aly2Inx2Ga1-y2-x2N (y2≧0, x2>0) nanodots having an In concentration higher than that of the zinc blende-type Aly1Inx1Ga1-y1-x1N (y1≧0, x1>0) mother crystal;
- wherein a tip of each of the Aly2Inx2Ga1-y2-x2N (y2≧0, x2>0) nanodots is not buried in the zinc blende-type Aly1Inx1Ga1-y1-x1N (y1≧0, x1>0) mother crystal.
4 more elements
Dependencies are inferred from the claim text.