Light-emitting element

A method of manufacturing a light-emitting element, comprising:

• forming an n-type nitride semiconductor layer on a substrate;
• forming a light-emitting layer on the n-type nitride semiconductor layer;
• forming a p-type nitride semiconductor layer on the light-emitting layer;
• and
• forming a transparent electrode layer on the p-type nitride semiconductor layer by selectively providing a transparent electrode material which is transparent to a light-emitting wavelength of the light-emitting layer, by
• forming a first electrode sublayer on the p-type nitride semiconductor layer by a sputtering method under a condition of a first energy;
• and
• forming a second electrode sublayer on the first electrode sublayer by a sputtering method under a condition of a second energy larger than the first energy, wherein
• the first electrode sublayer having a first thickness t1 is formed,
• the second electrode sublayer having a second thickness t2 that is greater than the first thickness t1 is formed, and
• the transparent electrode layer having a thickness T that is total thickness of the first thickness t1 and the second thickness t2 and satisfies the following expression (1) is formed:
• 3λ/4n+0.30×(λ/4n)≦T≦3λ/4n+0.45×(λ/4n) (1),
• wherein λ is the light-emitting wavelength of the light-emitting layer, and n is a refractive index of the transparent electrode layer.