Semiconductor photoreceiving device
AssigneeKabushiki Kaisha Toshiba
InventorsHaruhiko Yoshida, Kazuya Ohira, Mizunori Ezaki
Life of this patent
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Abstract
According to one embodiment, a semiconductor photoreceiving device includes a substrate, a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically, a semiconductor layer provided on the first structural layer and including an optical absorption layer, a reflective layer provided on the semiconductor layer, and a pair of electrodes configured to apply voltage to the optical absorption layer.
Claims18
A semiconductor photoreceiving device comprising:
- a substrate;
- a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically;
- a semiconductor layer provided on the first structural layer and including an optical absorption layer;
- a reflective layer provided on the semiconductor layer;
- and
- a pair of electrodes configured to apply voltage to the optical absorption layer,
- wherein the semiconductor layer is made from a group III-V compound semiconductor and having a multi-layer structure,
- wherein the multi-layer structure comprises a first contact layer provided on the first structural layer, a first cladding layer provided on the first contact layer, a first light confinement layer provided on the first cladding layer, a multi-quantum well layer as the optical absorption layer provided on the first light confinement layer, a second light confinement layer provided on the multi-quantum well layer, a second cladding layer provided on the second light confinement layer and a second contact layer provided on the second cladding layer,
- wherein a first region consisting of the first contact layer, the first cladding layer and the first light confinement layer and a second region consisting of the second light confinement layer, the second cladding layer and the second contact layer have different conductivity types each other,
- wherein the first contact layer is connected with one of the pair of the electrodes, and
- wherein the second contact layer is connected with another of the pair of the electrodes.
A semiconductor photoreceiving device comprising:
- a substrate;
- a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically;
- a semiconductor layer provided on the first structural layer and including an optical absorption layer;
- a reflective layer provided on the semiconductor layer;
- and
- a pair of electrodes configured to apply voltage to the optical absorption layer,
- wherein the reflective layer comprises a multilayer reflective film and a metal mirror, the multilayer reflective film and the metal mirror being provided in this order on the semiconductor layer.
A semiconductor photoreceiving device comprising:
- a substrate;
- a first structural layer provided on the substrate, in which light enters from the substrate side and in which a refractive index changes periodically;
- a semiconductor layer provided on the first structural layer and including an optical absorption layer;
- a reflective layer provided on the semiconductor layer;
- and
- a pair of electrodes configured to apply voltage to the optical absorption layer,
- wherein the reflective layer comprises a second structural layer in which the refractive index changes periodically and a metal mirror, the second structural layer and the metal mirror being provided in this order on the semiconductor layer.
Dependencies are inferred from the claim text.