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US 9,755,096 B2Granted
Lateral Ge/Si avalanche photodetector
AssigneeElenion Technologies, LLC
InventorsAri Novack, Yang Liu, Yi Zhang
Life of this patent
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Abstract
A lateral Ge/Si APD constructed on a silicon-on-insulator wafer includes a silicon device layer having regions that are doped to provide a lateral electric field and an avalanche region. A region having a modest doping level is in contact with a germanium body. There are no metal contacts made to the germanium body. The electrical contacts to the germanium body are made by way of the doped regions in the silicon device layer.
Claims20
A germanium avalanche photodiode, comprising:
- a substrate;
- a silicon device layer comprising a plurality of regions on the substrate;
- a germanium body adjacent said silicon device layer;
- a first electrical terminal in electrical communication with said germanium body by way of one of said plurality of regions of said silicon device layer;
- and
- a second electrical terminal in electrical communication with said germanium body by way of another one of said plurality of regions of said silicon device layer
- wherein the plurality of regions in said silicon device layer comprise, in order, a p++ doped region, a first region having a modest doping level, a p+ doped region, a second region having a modest doping level, and an n++ doped region.
4 more elements
Dependencies are inferred from the claim text.