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US 9,755,094 B2Granted
Imaging device
AssigneeRenesas Electronics Corporation
InventorsAtsushi Sakai, Katsumi Eikyu
Life of this patent
Estimating the term…
Abstract
To provide an imaging device equipped with a photodiode, which is capable of enhancing both of a capacity and sensitivity. In an area of a P-type well in which a photodiode is formed, a P-type impurity region is formed from the surface of the P-type well to a predetermined depth. Further, an N-type impurity region is formed to extend to a deeper position. N-type impurity regions and P-type impurity regions respectively extending in a gate width direction from a lower part of the N-type impurity region to a deeper position so as to contact the N-type impurity region are alternately arranged in a plural form along a gate length direction in a form to contact each other.
Claims15
An imaging device comprising:
- a semiconductor substrate having a main surface;
- an element forming area of a first conductivity type defined by an element isolation area formed in the semiconductor substrate;
- an electrode unit extending in a first direction so as to cross the element forming area in a form to divide the element forming area into a first area and a second area;
- and
- a photoelectric conversion unit formed in the first area,
- the photoelectric conversion unit including:
- a first impurity region of a first conductivity type formed from the surface of the element forming area to a first depth,
- a second impurity region of a second conductivity type formed from the first depth to a second depth deeper than the first depth so as to contact the first impurity region,
- a third impurity region of a first conductivity type extending in the first direction and formed from the second depth to a position deeper than the second depth in a form to contact the second impurity region, and
- a fourth impurity region of a second conductivity type extending in the first direction and formed from the second depth to a position deeper than the second depth in a form to contact the second impurity region, and
- the third impurity region and the fourth impurity region being alternately arranged in a plural form along a second direction orthogonal to the first direction in a form to contact each other.
8 more elements
An imaging device comprising:
- a semiconductor substrate having a main surface;
- an element forming area of a first conductivity type defined by an element isolation area formed in the semiconductor substrate;
- an electrode unit extending in a first direction so as to cross the element forming area in a form to divide the element forming area into a first area and a second area;
- and
- a photoelectric conversion unit including a light emitting element, which is formed in the first area,
- the photoelectric conversion unit including:
- a first impurity region of a first conductivity type formed from the surface of the element forming area to a first depth,
- a second impurity region of a second conductivity type extending in a second direction crossing the first direction and formed from the first depth to a position deeper than the first depth in a form to contact the first impurity region, and
- a third impurity region of a first conductivity type extending in the second direction and formed from the first depth to a position deeper than the first depth in a form to contact the first impurity region, and
- the second impurity region and the third impurity region being alternately arranged in a plural form along the first direction in a form to contact each other, with the plural portions of the second impurity region connected to each other by a portion of the second impurity region extending in the first direction.
7 more elements
An imaging device comprising:
- a semiconductor substrate having a main surface;
- an element forming area of a first conductivity type defined by an element isolation area formed in the semiconductor substrate;
- an electrode unit extending in a first direction so as to cross the element forming area in a form to divide the element forming area into a first area and a second area;
- and
- a photoelectric conversion unit formed in the first area,
- the element isolation area having an impurity isolation region of a first conductivity type formed from the main surface of the semiconductor substrate to a first depth, and
- the photoelectric conversion unit including:
- a first impurity region of a first conductivity type formed from the surface of the element forming area to a second depth shallower than the first depth,
- a second impurity region of a second conductivity type formed from the second depth to a third depth shallower than the first depth so as to contact the first impurity region, and
- a third impurity region of a second conductivity type being in contact with the second impurity region and formed from the third depth to a position deeper than the third depth along the impurity isolation region while contacting the impurity isolation region.
7 more elements
Dependencies are inferred from the claim text.