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US 9,755,093 B2Granted
Photoelectronic device using hybrid structure of silica nano particles—graphene quantum dots and method of manufacturing the same
AssigneeUniversity-Industry Cooperation Group of Kyung Hee University
InventorsSuk Ho Choi, Sung Kim
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Abstract
Disclosed are a photoelectronic device using a hybrid structure of silica nanoparticles and graphene quantum dots and a method of manufacturing the same. The photoelectronic device according to the present disclosure has a hybrid structure including graphene quantum dots (GQDs) bonded to surfaces of silica nanoparticles (SNPs), thereby increasing energy transfer efficiency.
Claims7
A photoelectronic device, comprising:
- an energy conversion layer having a hybrid structure that comprises graphene quantum dots (GQDs) bonded to surfaces of silica nanoparticles (SNPs);
- and
- electrodes formed on upper and lower parts of the energy conversion layer.
A method of manufacturing a photoelectronic device substrate, the method comprising:
- forming a first electrode on a substrate;
- forming an energy conversion layer having a hybrid structure of silica nanoparticles (SNPs) and graphene quantum dots (GQDs) bonded to surfaces of silica nanoparticles (SNPs) on the first electrode;
- and
- forming a second electrode on the energy conversion layer.
1 more element
Dependencies are inferred from the claim text.