Solar cell and method for manufacturing the same

A method for manufacturing a solar cell, the method comprising:

• respectively forming a front aluminum oxide (AlOx) layer and a back aluminum oxide (AlOx) layer on a front surface and a back surface of a semiconductor substrate simultaneously by an atomic layer deposition (ALD) method;
• annealing the front and back aluminum oxide layers on the front surface and the back surface of the semiconductor substrate at a temperature of about 450° C. to 700° C. to form a front silicon oxide (SiOx) layer having a thickness of about 1 nm to 3 nm between the front aluminum oxide layer and the front surface of the semiconductor substrate and a back silicon oxide (SiOx) layer having a thickness of about 1 nm to 3 nm between the back aluminum oxide layer and the back surface of the semiconductor substrate;
• and
• removing one of the front aluminum oxide layer and the back aluminum oxide layer depending on a conductive type of the semiconductor substrate after the step of annealing the front and back aluminum oxide layers, thereby leaving the front silicon oxide layer and the back silicon oxide layer regardless of the conductive type of the semiconductor substrate, and thereby leaving only one of the front aluminum oxide layer or the back aluminum oxide layer depending on the conductive type of the semiconductor substrate.