Multi-level stacked transistor device including capacitor and different semiconductor materials

A semiconductor device comprising:

• a first transistor including a first semiconductor material;
• a first insulating film over the first transistor;
• a second insulating film over the first insulating film;
• a third insulating film over the second insulating film;
• a capacitor over the first insulating film;
• and
• a second transistor over the third insulating film,
• wherein the second transistor comprises:
• a semiconductor layer including a second semiconductor material;
• a fourth insulating film over the semiconductor layer;
• a gate electrode overlapping with the semiconductor layer with the fourth insulating film interposed therebetween;
• a source electrode in contact with the semiconductor layer;
• and
• a drain electrode in contact with the semiconductor layer,
• wherein the capacitor is electrically connected to the second transistor,
• wherein the capacitor comprises a first electrode, a second electrode, a fifth insulating film interposed between the first electrode and the second electrode, and a sixth insulating film interposed between the first electrode and the fifth insulating film,
• wherein the sixth insulating film is over the second insulating film,
• wherein an entirety of the first electrode is overlapped with one of the source electrode and the drain electrode,
• wherein the first electrode is embedded in the second insulating film,
• wherein the second electrode and the fifth insulating film are in an opening provided in the third insulating film, and
• wherein the first semiconductor material and the second semiconductor material are different from each other.