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AssigneeSemiconductor Energy Laboratory Co., Ltd.
InventorsKosei Noda, Satoshi Toriumi, Kazuki Tanemura
Estimating the term…
Electrical characteristics of a semiconductor device including the oxide semiconductor are improved. Furthermore, a highly reliable transistor with small variation in electrical characteristics is manufactured. An oxynitride insulating film functioning as a base insulating film and a transistor in contact with the oxynitride insulating film are provided. The transistor includes an oxide semiconductor film in contact with the oxynitride insulating film functioning as a base insulating film. The total amount of gas having a mass-to-charge ratio of 30 released from the oxynitride insulating film by heat treatment and double of the amount of a gas having a mass-to-charge ratio of 32 released from the oxynitride insulating film by heat treatment is greater than or equal to 5×1015/cm2 and less than or equal to 5×1016/cm2, or greater than or equal to 5×1015/cm2 and less than or equal to 3×1016/cm2.
A semiconductor device comprising:
A semiconductor device comprising:
Dependencies are inferred from the claim text.
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Characterised by the active materials: oxide semiconductors, e.g. zinc oxide, copper aluminium oxide or cadmium stannate
Thin-film transistors [TFT]: having supplementary regions or layers in the thin films or in the insulated bulk substrates for controlling…
Characterised by the electrode materials: conductor-insulator-semiconductor electrodes
Thin-film transistors [TFT]: characterised by the insulating substrates
About 7 years 6 months of term left · ends 14 Apr 2034 (estimated)
1. Field of the Invention
The present invention relates to a semiconductor device including a field-effect transistor and a method for manufacturing the semiconductor device.
2. Description of the Related Art
FIGS. 1A to 1C are a top view and cross-sectional views illustrating one embodiment of a transistor.
FIGS. 2A to 2D are cross-sectional views illustrating one embodiment of a method for manufacturing a transistor.
FIGS. 3A to 3C are a top view and cross-sectional views illustrating one embodiment of a transistor.
Embodiments of the present invention will be described below in detail with reference to the drawings. Note that the present invention is not limited to the following description. Note that the present invention is not limited to the following description, and it is easily understood by those skilled in the art that the mode and details can be variously changed without departing from the spirit and scope of the present invention. Therefore, the present invention should not be construed as being limited to the following description of the embodiments. In addition, in the following embodiments and example, the same portions or portions having similar functions are denoted by the same reference numerals or the same hatching patterns in different drawings, and description thereof will not be repeated.
Note that in each drawing described in this specification, the size, the film thickness, or the region of each component may be exaggerated for clarity. Therefore, embodiments of the present invention are not limited to such a scale.
In addition, terms such as “first”, “second”, and “third” in this specification are used in order to avoid confusion among components, and the terms do not limit the components numerically. Therefore, for example, description can be made even when “first” is replaced with “second” or “third”, as appropriate.