Semiconductor devices including insulating gates and methods for fabricating the same

A semiconductor device comprising:

• a first active fin extending in a first direction;
• a second active fin spaced apart from the first active fin in the first direction, the second active fin extending in the first direction;
• a third active fin spaced apart from the first active fin in a second direction, the third active fin extending in the first direction;
• a first dummy gate extending in the second direction perpendicular to the first direction overlapping with a first end of the first active fin, wherein the first dummy gate does not overlap with the third active fin;
• a second dummy gate extending in the second direction overlapping a second end of the second active fin facing the first end of the first active fin;
• a first normal gate extending in the second direction intersecting the first active fin;
• a first insulating gate extending in the second direction intersecting the first and third active fins, respectively;
• a second normal gate extending in the second direction intersecting the second active fin;
• and
• a second insulating gate extending in the second direction intersecting the second active fin,
• wherein the first insulating gate extends into the first active fin, and the second insulating gate extends into the second active fin, wherein the first and third active fins overlap in the second direction.